Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3 × 3) - 3C - SiC(-1-1-1) reconstruction
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2015
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Mcode
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Language
en
Pages
1-5
Series
PHYSICAL REVIEW B, Volume 91, issue 16
Abstract
We address the stability of the surface phases that occur on the C side of 3C−SiC(1¯1¯1¯) at the onset of graphene formation. In this growth range, experimental reports reveal a coexistence of several surface phases. This coexistence can be explained by a Si-rich model for the unknown (3×3) reconstruction, the known (2×2)C adatom phase, and the graphene-covered (2×2)C phase. By constructing an ab initio surface phase diagram using a van der Waals corrected density functional, we show that the formation of a well defined interface structure like the “buffer layer” on the Si side is blocked by Si-rich surface reconstructions.Description
Keywords
density functional theory, graphene, silicon carbide, surface science
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Citation
Nemec, L, Lazarevic, F, Rinke, P, Scheffler, M & Blum, V 2015, ' Why graphene growth is very different on the C face than on the Si face of SiC: Insights from surface equilibria and the (3 × 3) - 3C - SiC(-1-1-1) reconstruction ', Physical Review B, vol. 91, no. 16, 161408, pp. 1-5 . https://doi.org/10.1103/PhysRevB.91.161408
