Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorHomeyer, E.
dc.contributor.authorMattila, P.
dc.contributor.authorOksanen, J.
dc.contributor.authorSadi, T.
dc.contributor.authorNykänen, H.
dc.contributor.authorSuihkonen, S.
dc.contributor.authorSymonds, C.
dc.contributor.authorTulkki, J.
dc.contributor.authorTuomisto, Filip
dc.contributor.authorSopanen, M.
dc.contributor.authorBellessa, J.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-08-18T09:01:52Z
dc.date.available2015-08-18T09:01:52Z
dc.date.issued2013
dc.description.abstractWe demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.en
dc.description.versionPeer revieweden
dc.format.extent081110/1-4
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHomeyer, E. & Mattila, P. & Oksanen, J. & Sadi, T. & Nykänen, H. & Suihkonen, S. & Symonds, C. & Tulkki, J. & Tuomisto, Filip & Sopanen, M. & Bellessa, J. 2013. Enhanced light extraction from InGaN/GaN quantum wells with silver gratings. Applied Physics Letters. Volume 102, Issue 8. 081110/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4794066en
dc.identifier.doi10.1063/1.4794066
dc.identifier.issn0003-6951 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17463
dc.identifier.urnURN:NBN:fi:aalto-201508174081
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 102, Issue 8
dc.rights© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 102, Issue 8 and may be found at http://scitation.aip.org/content/aip/journal/apl/102/8/10.1063/1.4794066.en
dc.rights.holderAIP Publishing
dc.subject.keyworddiffraction gratingsen
dc.subject.keywordquantum wellsen
dc.subject.keywordsemiconductorsen
dc.subject.otherPhysicsen
dc.titleEnhanced light extraction from InGaN/GaN quantum wells with silver gratingsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

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