Enhanced light extraction from InGaN/GaN quantum wells with silver gratings
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© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 102, Issue 8 and may be found at http://scitation.aip.org/content/aip/journal/apl/102/8/10.1063/1.4794066.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Language
en
Pages
081110/1-4
Series
Applied Physics Letters, Volume 102, Issue 8
Abstract
We demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. The InGaN/GaN quantum well is inserted into a dielectric waveguide, naturally formed in the structure, and a silver grating is deposited on the surface and covered with a polymer film. The polymer layer greatly improves the extraction compared to a single metallic grating. The comparison of the experiments with simulations gives strong indications on the key role of weakly guided modes in the polymer layer diffracted by the grating.Description
Keywords
diffraction gratings, quantum wells, semiconductors
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Citation
Homeyer, E. & Mattila, P. & Oksanen, J. & Sadi, T. & Nykänen, H. & Suihkonen, S. & Symonds, C. & Tulkki, J. & Tuomisto, Filip & Sopanen, M. & Bellessa, J. 2013. Enhanced light extraction from InGaN/GaN quantum wells with silver gratings. Applied Physics Letters. Volume 102, Issue 8. 081110/1-4. ISSN 0003-6951 (printed). DOI: 10.1063/1.4794066