Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, X-ray photoelectron spectroscopy and angle-resolved photoemission. It was demonstrated the possibility of fabrication of the gas and biosensors that is based on grown graphene films. The gas sensors are sufficiently sensitive to NO2 at low concentrations. The biosensor operation was checked using an immunochemical system comprising fluorescein dye and monoclonal anti fluorescein antibodies. The sensor detects fluorescein concentration on a level of 1-10 ng/mL and bovine serum albumin- fluorescein conjugate on a level of 1-5 ng/mL. The proposed device has good prospects for use for early diagnostics of various diseases.

DOI

10.1088/1742-6596/951/1/012007

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Lebedev, A A, Davydov, V Y, Usachov, D Y, Lebedev, S P, Smirnov, A N, Levitskii, V S, Eliseyev, I A, Alekseev, P A, Dunaevskiy, M S, Rybkin, A G, Novikov, S N & Makarov, Y N 2018, ' Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method ', Journal of Physics: Conference Series, vol. 951, no. 1, 012007 . https://doi.org/10.1088/1742-6596/951/1/012007

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https://urn.fi/URN:NBN:fi:aalto-201803161725

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[article-cris] Sähkötekniikan korkeakoulu / ELEC

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Study of properties and development of sensors based on graphene films grown on SiC (0001) by thermal destruction method

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