MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2018-04-01
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Language
en
Pages
5
12-16
12-16
Series
Journal of Crystal Growth, Volume 487
Abstract
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1° towards 〈1¯100〉. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm×2μm atomic force microscope scan.Description
Keywords
A1. Polarity, A1. X-ray diffraction, A3. Metal-organic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting aluminum compounds
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Citation
Lemettinen, J, Okumura, H, Kim, I, Kauppinen, C, Palacios, T & Suihkonen, S 2018, ' MOVPE growth of N-polar AlN on 4H-SiC : Effect of substrate miscut on layer quality ', Journal of Crystal Growth, vol. 487, pp. 12-16 . https://doi.org/10.1016/j.jcrysgro.2018.02.013