Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes

Simple item page
dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKivisaari, Pyry
dc.contributor.authorRiuttanen, Lauri
dc.contributor.authorOksanen, Jani
dc.contributor.authorSuihkonen, Sami
dc.contributor.authorAli, Muhammad
dc.contributor.authorLipsanen, Harri
dc.contributor.authorTulkki, Jukka
dc.contributor.departmentDepartment of Neuroscience and Biomedical Engineering
dc.contributor.departmentDepartment of Micro and Nanosciences
dc.date.accessioned2017-10-13T10:33:16Z
dc.date.available2017-10-13T10:33:16Z
dc.date.issued2012
dc.description.abstractWe propose a direct electrical measurement method for determining the extraction efficiency (EXE) and internal quantum efficiency (IQE) of III-Nitride light-emitting diodes (LEDs). The method is based on measuring the optical output power as a function of injection current at current densities near the external quantum efficiency (EQE) maximum and extracting IQE and EXE from the measurement data. In contrast to conventional methods, our method requires no low temperature measurements or prior knowledge of the device structure. The method is far more convenient than commonly used methods because it enables measuring the EXE and IQE of different LED structures at room temperature directly in a repeatable and consistent way. This enables convenient comparison of LED structures. We apply the method to determine the IQE and EXE of one commercial LED and selected self-grown planar LED chips to compare the effects of different LED structure designs. Our results are in line with published experimental results and also give more insight to our earlier findings regarding the effects of growth parameters on the quantum efficiency. In addition, our measurement method allows estimating the Shockley-Read-Hall and radiative recombination parameters if the Auger parameter is known.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.extent1-4
dc.format.mimetypeapplication/pdf
dc.identifier.citationKivisaari , P , Riuttanen , L , Oksanen , J , Suihkonen , S , Ali , M , Lipsanen , H & Tulkki , J 2012 , ' Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes ' , Applied Physics Letters , vol. 101 , no. 2 , 021113 , pp. 1-4 . https://doi.org/10.1063/1.4736565en
dc.identifier.doi10.1063/1.4736565
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.otherPURE UUID: 3bc871f4-4061-4b5c-bdb2-537f8eee3db9
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/3bc871f4-4061-4b5c-bdb2-537f8eee3db9
dc.identifier.otherPURE LINK: http://dx.doi.org/10.1063/1.4736565
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14780488/1.4736565.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/28158
dc.identifier.urnURN:NBN:fi:aalto-201710137019
dc.language.isoenen
dc.relation.ispartofseriesAPPLIED PHYSICS LETTERSen
dc.relation.ispartofseriesVolume 101, issue 2en
dc.rightsopenAccessen
dc.titleElectrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodesen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion
Files
Collections
[article-cris] Perustieteiden korkeakoulu / SCI