Surface potential response from GaP nanowires synthesized with mixed crystal phases

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorKyeyune, Ben_US
dc.contributor.authorSoboleva, Ekaterinaen_US
dc.contributor.authorGeydt, Pen_US
dc.contributor.authorKhayrudinov, Vladislaven_US
dc.contributor.authorAlekseev, Prokhoren_US
dc.contributor.authorLipsanen, Harrien_US
dc.contributor.authorLähderanta, Een_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHarri Lipsanen Groupen
dc.contributor.organizationLUT Universityen_US
dc.contributor.organizationNovosibirsk State Universityen_US
dc.contributor.organizationRussian Academy of Sciences, Ioffe Physical-Technical Instituteen_US
dc.date.accessioned2020-01-02T14:07:11Z
dc.date.available2020-01-02T14:07:11Z
dc.date.issued2019en_US
dc.description.abstractIn this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.en
dc.description.versionPeer revieweden
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationKyeyune, B, Soboleva, E, Geydt, P, Khayrudinov, V, Alekseev, P, Lipsanen, H & Lähderanta, E 2019, ' Surface potential response from GaP nanowires synthesized with mixed crystal phases ', Journal of Physics: Conference Series, vol. 1400, 044018 . https://doi.org/10.1088/1742-6596/1400/4/044018, https://doi.org/10.1088/1742-6596/1400/4/044018en
dc.identifier.doi10.1088/1742-6596/1400/4/044018en_US
dc.identifier.issn1742-6588
dc.identifier.issn1742-6596
dc.identifier.otherPURE UUID: afaa7f93-83c2-4f6d-82e8-ee3a25b30af1en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/afaa7f93-83c2-4f6d-82e8-ee3a25b30af1en_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/39572528/ELEC_Kyeyune_Surface_potential_JoPCS.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/42183
dc.identifier.urnURN:NBN:fi:aalto-202001021294
dc.language.isoenen
dc.publisherIOP Publishing Ltd.
dc.relation.ispartofseriesJournal of Physics: Conference Seriesen
dc.relation.ispartofseriesVolume 1400en
dc.rightsopenAccessen
dc.subject.keywordAtomic Force Microscopy (AFM)en_US
dc.subject.keywordNanowires (NWs)en_US
dc.subject.keywordKelvin Probe Force Microscopy (KPFM)en_US
dc.subject.keywordWurzite (WZ)en_US
dc.subject.keywordZincblende (ZB)en_US
dc.subject.keywordGallium phosphide (GaP)en_US
dc.subject.keywordWURTZITEen_US
dc.titleSurface potential response from GaP nanowires synthesized with mixed crystal phasesen
dc.typeA4 Artikkeli konferenssijulkaisussafi
dc.type.versionpublishedVersion

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