Surface potential response from GaP nanowires synthesized with mixed crystal phases
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A4 Artikkeli konferenssijulkaisussa
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Date
2019
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en
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Journal of Physics: Conference Series, Volume 1400
Abstract
In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.Description
Keywords
Atomic Force Microscopy (AFM), Nanowires (NWs), Kelvin Probe Force Microscopy (KPFM), Wurzite (WZ), Zincblende (ZB), Gallium phosphide (GaP), WURTZITE
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Citation
Kyeyune, B, Soboleva, E, Geydt, P, Khayrudinov, V, Alekseev, P, Lipsanen, H & Lähderanta, E 2019, ' Surface potential response from GaP nanowires synthesized with mixed crystal phases ', Journal of Physics: Conference Series, vol. 1400, 044018 . https://doi.org/10.1088/1742-6596/1400/4/044018, https://doi.org/10.1088/1742-6596/1400/4/044018