Surface potential response from GaP nanowires synthesized with mixed crystal phases
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A4 Artikkeli konferenssijulkaisussa
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
Series
Journal of Physics: Conference Series, Volume 1400
Abstract
In this work, we investigate variations of surface potentials along a single gallium phosphide (GaP) nanowire (NW) synthesized with a mixed crystal phase along the growth direction. GaP NWs synthesized with both wurtzite (WZ) and zincblende (ZB) phases were studied. The measurements were performed on a standard Atomic Force Microscopy (AFM) set-up equipped with Kelvin Probe Force Microscopy (KPFM) module in PeakForce Tapping Mode. KPFM Measurements from two structures were analyzed. Variations of surface poten-tials were observed in a single GaP NW with WZ/ZB segments. An average difference in surface potential was 55±11 mV. This is explained by different crystal structures along the NW. The work expands the understanding of crystal structure-dependent electrical transport properties of GaP NWs.Description
Other note
Citation
Kyeyune, B, Soboleva, E, Geydt, P, Khayrudinov, V, Alekseev, P, Lipsanen, H & Lähderanta, E 2019, 'Surface potential response from GaP nanowires synthesized with mixed crystal phases', Journal of Physics: Conference Series, vol. 1400, 044018. https://doi.org/10.1088/1742-6596/1400/4/044018, https://doi.org/10.1088/1742-6596/1400/4/044018