Noise of a single electron transistor on a Si3N4 membrane

Loading...
Thumbnail Image
Access rights
openAccess
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
1999-09
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
2684-2686
Series
Journal of Applied Physics, Volume 86, issue 5
Abstract
We have investigated the influence of electron-beam writing on the creation of charge trapping centers which cause 1/f noise in single electron transistors (SET). Two Al/AlOx/Al devices were compared: one where the SET is on a {100} silicon wafer covered by a 120-nm-thick layer of Si3N4, and another one in which the Si was etched away from below the nitride membrane before patterning the SET. The background charge noise was found to be 1 × 10-3e/√Hz at 10 Hz in both devices, independent of the substrate thickness.
Description
Keywords
noise, Si_(3)N_(4) membrane, single electron transistor
Other note
Citation
Hakonen , P J , Ikonen , J M , Parts , Ü , Penttilä , J S , Roschier , L R & Paalanen , M A 1999 , ' Noise of a single electron transistor on a Si3N4 membrane ' , Journal of Applied Physics , vol. 86 , no. 5 , pp. 2684-2686 . https://doi.org/10.1063/1.371110