aalto1 untyped-item.component.html
Acceptors in undoped GaSb; the role of vacancy defects
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Authors
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
4
Series
Journal of Physics: Conference Series, Volume 443, issue 1, pp. 1-4
Abstract
The conventional lifetime setup was used to study Czochralski grown unintentionally p- and n- type ([n] ≈ 6 × 1017cm−3) GaSb bulk samples. Several approaches were used to analyze the data. However, it was not possible to successfully analyze the obtained spectrums with the conventional trapping model. From the analyzed data it was derived that the reason for p-type behavior of GaSb was not VGa. Additionally, the role of gallium vacancy was studied and it's effect to lifetime values are shortly discussed.
Description
Other note
Citation
Kujala, J, Slotte, J & Tuomisto, F 2013, 'Acceptors in undoped GaSb; the role of vacancy defects', Journal of Physics: Conference Series, vol. 443, no. 1, 012042, pp. 1-4. https://doi.org/10.1088/1742-6596/443/1/012042