Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation
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© 1999 AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 75, Issue 5 and may be found at http://scitation.aip.org/content/aip/journal/apl/75/5/10.1063/1.124495.
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1999
Major/Subject
Mcode
Degree programme
Language
en
Pages
728-730
Series
Applied Physics Letters, Volume 75, Issue 5
Abstract
We positioned semiconducting multiwalled carbon nanotube, using an atomic force microscope, between two gold electrodes at SiO2 surface. Transport measurements exhibit single-electron effects with a charging energy of 24 K. Using the Coulomb staircase model, the capacitances and resistances between the tube and the electrodes can be characterized in detail.Description
Keywords
carbon nanotubes, single-electron transistors
Other note
Citation
Roschier, Leif & Penttilä, Jari & Martin, Michel & Hakonen, Pertti J. & Paalanen, Mikko & Tapper, Unto & Kauppinen, Esko I. & Journet, Catherine & Bernier, Patrick. 1999. Single-electron transistor made of multiwalled carbon nanotube using scanning probe manipulation. Applied Physics Letters. Volume 75, Issue 5. 728-730. ISSN 0003-6951 (printed). DOI: 10.1063/1.124495.