Engineering dielectric materials for high-performance organic light emitting transistors (Olets)

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorSoldano, Caterinaen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorCaterina Soldano Groupen
dc.date.accessioned2021-08-04T06:46:08Z
dc.date.available2021-08-04T06:46:08Z
dc.date.issued2021-07-01en_US
dc.descriptionFunding Information: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Funding Information: Acknowledgments: The Author thanks the support from Academy of Finland Flagship Program (Grant No.: 320167, PREIN). Author thanks Gianluca Generali and many colleagues in ETC srl and CNR-ISMN (Italy) for valuable discussions on organic light emitting transistors during the years. Publisher Copyright: © 2021 by the author. Licensee MDPI, Basel, Switzerland.
dc.description.abstractOrganic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.en
dc.description.versionPeer revieweden
dc.format.extent34
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationSoldano, C 2021, 'Engineering dielectric materials for high-performance organic light emitting transistors (Olets)', Materials, vol. 14, no. 13, 3756. https://doi.org/10.3390/ma14133756en
dc.identifier.doi10.3390/ma14133756en_US
dc.identifier.issn1996-1944
dc.identifier.otherPURE UUID: ddd6bf61-79df-4a56-b5c1-57df374e71dden_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/ddd6bf61-79df-4a56-b5c1-57df374e71dden_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85110383050&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/66251627/ELEC_Soldani_Engineering_dielectric_materials.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/108978
dc.identifier.urnURN:NBN:fi:aalto-202108048222
dc.language.isoenen
dc.publisherMDPI AG
dc.relation.ispartofseriesMaterialsen
dc.relation.ispartofseriesVolume 14, issue 13en
dc.rightsopenAccessen
dc.subject.keywordGate dielectricsen_US
dc.subject.keywordHigh-k dielectricsen_US
dc.subject.keywordHigh-k oxideen_US
dc.subject.keywordHigh-k polymeren_US
dc.subject.keywordInsulating layeren_US
dc.subject.keywordLight manipulationen_US
dc.subject.keywordLow-bias transistorsen_US
dc.subject.keywordOrganic light emitting transistor (OLET)en_US
dc.titleEngineering dielectric materials for high-performance organic light emitting transistors (Olets)en
dc.typeA2 Katsausartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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