Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator
School of Electrical Engineering | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Journal of Applied Physics, Volume 110, Issue 4
AbstractWe present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.
mobile ion contamination, silicon microelectromechanical resonator, stability, silicon, MEM resonator, capasitance, resonance frequency, frequency drift
Haarahiltunen, Antti & Varpula, Aapo & Savin, Hele. 2011. Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator. Journal of Applied Physics. Volume 110, Issue 4. 0021-8979 (printed). DOI: 10.1063/1.3622511.