Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date

2016-02-01

Department

Department of Neuroscience and Biomedical Engineering

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Mcode

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Language

en

Pages

6

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Optical and Quantum Electronics, Volume 48, issue 2, pp. 1-6

Abstract

Hot carrier effects have been observed in recent measurements of III–Nitride (III–N) light-emitting diodes. In this paper we carry out bipolar Monte Carlo simulations for electrons and holes in a typical III–N multi-quantum well (MQW) LED. According to our simulations, significant non-quasiequilibrium carrier distributions exist in the barrier layers of the structure. This is observed as average carrier energies much larger than the 1.5kBT corresponding to quasi-equilibrium. Due to the small potential drop over the MQW being modest, the non-quasiequilibrium carriers can be predominantly ascribed to nnp and npp Auger processes taking place in the QWs. Further investigations are needed to determine the effects of hot carriers on the macroscopic device characteristics of real devices.

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Keywords

Hot carriers, III–Nitride LEDs, Monte Carlo simulations, Non-equilibrium hole distribution

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DOI

10.1007/s11082-016-0406-4

Citation

Kivisaari, P, Sadi, T, Oksanen, J & Tulkki, J 2016, ' Monte Carlo study of non-quasiequilibrium carrier dynamics in III–N LEDs ', Optical and Quantum Electronics, vol. 48, no. 2, 154, pp. 1-6 . https://doi.org/10.1007/s11082-016-0406-4

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https://urn.fi/URN:NBN:fi:aalto-202211236613

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[article-cris] Perustieteiden korkeakoulu / SCI