Moving Beyond p-Type mc-Si: Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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6
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IEEE Journal of Photovoltaics, Volume 8, issue 6, pp. 1525 - 1530
Abstract
N-type multicrystalline silicon (mc-Si) is a promising alternative to the dominant p-type mc-Si for solar cells because it combines the cost advantages of mc-Si while benefiting from higher tolerance to transition metal contamination. A detailed understanding of the relative roles of point defect and precipitated transition metals has enabled advanced processing and high minority carrier lifetimes in p-type mc-Si. This contribution extends that fundamental understanding to Fe contamination in n-type mc-Si, helping enable processing of this material into an economical and high-performance photovoltaic device. By directly correlating micro-photoluminescence-based minority carrier lifetime mapping and synchrotron-based micro-X-ray fluorescence mapping of Fe-rich precipitates, we develop a quantitative, physical understanding of the recombination activity of Fe-rich precipitates in n-type mc-Si.Description
| openaire: EC/FP7/307315/EU//SOLARX
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Morishige, A E, Heinz, F D, Laine, H S, Schon, J, Kwapil, W, Lai, B, Savin, H, Schubert, M C & Buonassisi, T 2018, 'Moving Beyond p-Type mc-Si : Quantified Measurements of Iron Content and Lifetime of Iron-Rich Precipitates in n-Type Silicon', IEEE Journal of Photovoltaics, vol. 8, no. 6, pp. 1525 - 1530. https://doi.org/10.1109/JPHOTOV.2018.2869544