Vacancy generation in liquid phase epitaxy of Si
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
2007-06
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
1-6
1-6
Series
PHYSICAL REVIEW B, Volume 75, issue 23
Abstract
Concerted experiments and theoretical analysis are applied to conclusively demonstrate the vacancy generation during fast melting and regrowth of Si by laser irradiation. Experiments, based on the positron annihilation spectroscopy and designed to test the theoretical predictions, evidence a vacancy supersaturation after the laser process depending on the irradiation conditions. Stochastic atomistic simulations of the molten Si recrystallization show trapping of vacancies in the recrystallized region. Finally, continuum phase-field simulations of the full process, calibrated using the Monte Carlo results, show a defect evolution in close agreement with the experiments.Description
Keywords
laser annealing, positron annihilation, silicon, vacancies
Other note
Citation
La Magna , A , Privitera , V , Fortunato , G , Cuscuna , M , Svensson , B G , Monakov , E , Kuitunen , K , Slotte , J & Tuomisto , F 2007 , ' Vacancy generation in liquid phase epitaxy of Si ' , Physical Review B , vol. 75 , no. 23 , 235201 , pp. 1-6 . https://doi.org/10.1103/PhysRevB.75.235201