Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO

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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2003-11
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Mcode
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Language
en
Pages
4
1-4
Series
Physical Review Letters, Volume 91, issue 20
Abstract
We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (Eel=2   MeV, fluence 6×1017   cm−2) ZnO samples. The Zn vacancies are identified at concentrations of [VZn]≃2×1015   cm−3 in the as-grown material and [VZn]≃2×1016   cm−3 in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.
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Keywords
acceptor, irradiation, vacancy, ZnO
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Citation
Tuomisto , F , Ranki , V , Saarinen , K & Look , D C 2003 , ' Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO ' , Physical Review Letters , vol. 91 , no. 20 , 205502 , pp. 1-4 . https://doi.org/10.1103/PhysRevLett.91.205502