Detection of mechanical resonance of a single-electron transistor by direct current

Simple item page
dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorPashkin, Yu. A.
dc.contributor.authorLi, T. F.
dc.contributor.authorPekola, Jukka P.
dc.contributor.authorAstafiev, O.
dc.contributor.authorKnyazev, D. A.
dc.contributor.authorHoehne, F.
dc.contributor.authorIm, H.
dc.contributor.authorNakamura, Y.
dc.contributor.authorTsai, J. S.
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-05-19T09:02:07Z
dc.date.available2015-05-19T09:02:07Z
dc.date.issued2010
dc.description.abstractWe have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.en
dc.description.versionPeer revieweden
dc.format.extent263513/1-3
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPashkin, Yu. A. & Li, T. F. & Pekola, Jukka & Astafiev, O. & Knyazev, D. A. & Hoehne, F. & Im, H. & Nakamura, Y. & Tsai, J. S. 2010. Detection of mechanical resonance of a single-electron transistor by direct current. Applied Physics Letters. Volume 96, Issue 26. P. 263513/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3455880.en
dc.identifier.doi10.1063/1.3455880
dc.identifier.issn0003-6951 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/16094
dc.identifier.urnURN:NBN:fi:aalto-201505192745
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseriesVolume 96, Issue 26
dc.rights© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/96/26/10.1063/1.3455880en
dc.rights.holderAmerican Institute of Physics
dc.subject.keywordmechanical resonanceen
dc.subject.keywordsingle-electron transistoren
dc.subject.keyworddirect currenten
dc.subject.keywordvibration resonanceen
dc.subject.keywordcapacitanceen
dc.subject.keywordcoupled resonatorsen
dc.subject.keywordelectrodesen
dc.subject.keywordelectric measurementsen
dc.subject.otherPhysicsen
dc.titleDetection of mechanical resonance of a single-electron transistor by direct currenten
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
A1_pashkin_yu_a_2010.pdf
Size:
881.91 KB
Format:
Adobe Portable Document Format
Download

Collections

[article] Perustieteiden korkeakoulu / SCI