Detection of mechanical resonance of a single-electron transistor by direct current

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2010
Major/Subject
Mcode
Degree programme
Language
en
Pages
263513/1-3
Series
Applied Physics Letters, Volume 96, Issue 26
Abstract
We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.
Description
Keywords
mechanical resonance, single-electron transistor, direct current, vibration resonance, capacitance, coupled resonators, electrodes, electric measurements
Other note
Citation
Pashkin, Yu. A. & Li, T. F. & Pekola, Jukka & Astafiev, O. & Knyazev, D. A. & Hoehne, F. & Im, H. & Nakamura, Y. & Tsai, J. S. 2010. Detection of mechanical resonance of a single-electron transistor by direct current. Applied Physics Letters. Volume 96, Issue 26. P. 263513/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3455880.