Efficient Process for Direct Atomic Layer Deposition of Metallic Cu Thin Films Based on an Organic Reductant
No Thumbnail Available
Access rights
openAccess
acceptedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Date
2017-02-14
Major/Subject
Mcode
Degree programme
Language
en
Pages
6
Series
Chemistry of Materials, Volume 29, issue 3, pp. 1230-1235
Abstract
We report a promising approach to use an organic reductant for in situ atomic layer deposition (ALD) of metallic copper films. The process is based on sequentially pulsed precursors copper acetyl acetonate (acac), water, and hydroquinone (HQ) and yields crystalline copper films at temperatures as low as <200 °C with an appreciably high deposition rate of ∼2 Å/cycle. Deposition parameters are explored for the process m × [n × (Cu(acac)2-H2O)-HQ] with several values of m and n, keeping m×n fixed to 500. The films are found crystalline with metallic copper as the main phase, but different trace amounts of Cu2O are observed when the HQ pulse frequency decreases below 1/5. The as-deposited copper films are shiny and specularly reflecting and show metallic-type electrical conductivity. The absolute resistivity of the films estimated at room temperature is in the order of 2-5 µO cm, having a sizable contribution, with 0.5 µO cm from residual resistivity as a result of impurities and/or imperfections. We believe that the new process could yield benefits in interconnect applications.Description
| openaire: EC/FP7/339478/EU//LAYERENG-HYBMAT
Keywords
Other note
Citation
Tripathi, T S & Karppinen, M 2017, ' Efficient Process for Direct Atomic Layer Deposition of Metallic Cu Thin Films Based on an Organic Reductant ', Chemistry of Materials, vol. 29, no. 3, pp. 1230-1235 . https://doi.org/10.1021/acs.chemmater.6b04597