P-n junctions in planar GaAs nanowires
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2023-02-03
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en
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9
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CrystEngComm, Volume 25, issue 9, pp. 1374–1382
Abstract
Control over the doping at the nanoscale during the growth of nanostructures is one of the key challenges of device fabrication. In this work we study p (Zn)- and n (Sn)- doping distributions and a formation of 3D p-n junctions in planar GaAs nanowires grown on doped GaAs substrates. We employ a combination of scanning electron microscopy, transmission electron microscopy, conductive atomic force microscopy studies supported by theoretical analysis and numerical simulations to investigate and explain the nanowire morphology and doping distribution inside. Our studies show that the n-p-n or p-n-p "bipolar transistor"-like lateral nanostructures can be formed during the p-n or n-p growth of planar nanowires on 2 degrees misoriented (001) GaAs substrates. Whereas core-shell "field effect transistor"- like structures can be synthesized on singular (001) substrates. We show that the effect of the substrate misorientation on the 3D doping distribution originates from preferable incorporation of dopants in polar side facets compared to a non-polar top (001) facet.Description
Funding Information: V. K. acknowledges the support of Aalto University Doctoral School, Walter Ahlström Foundation, Elektroniikkainsinöörien Säätiö, Sähköinsinööriliiton Säätiö, Nokia Foundation, Finnish Foundation for Technology Promotion (Tekniikan Edistämissäätiö), Waldemar von Frenckell's foundation and Kansallis-Osake-Pankki fund. The Academy of Finland Photonics Flagship PREIN is acknowledged. We acknowledge the provision of facilities and technical support by Aalto University at Micronova Nanofabrication Centre. NS acknowledge the St. Petersburg State University support of the growth modeling by the grant No 94033852. TEM data was obtained using the equipment of the Interdisciplinary Resource Centre for Nanotechnology of St. Petersburg State University. Publisher Copyright: © 2023 The Royal Society of Chemistry.
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Borodin, B R, Alekseev, P A, Khayrudinov, V, Ubyivovk, E, Berdnikov, Y, Sibirev, N & Lipsanen, H 2023, ' P-n junctions in planar GaAs nanowires ', CrystEngComm, vol. 25, no. 9, pp. 1374–1382 . https://doi.org/10.1039/d2ce01438f