VTTMOS - a two-dimensional program for simulation of high-voltage semiconducter devices

No Thumbnail Available
Journal Title
Journal ISSN
Volume Title
Helsinki University of Technology | Licentiate thesis
Checking the digitized thesis and permission for publishing
Instructions for the author
Date
1987
Major/Subject
Elektronifysiikka
Mcode
1.69
Degree programme
Language
en
Pages
82
Series
Description
Supervisor
Sinkkonen, Juha
Thesis advisor
Pohjonen, Helena
Keywords
analysis, DMOS, finite element, Helmholtz, high-voltage, Laplace, Poisson, potential, semiconductor, simulation
Other note
Citation