VTTMOS - a two-dimensional program for simulation of high-voltage semiconducter devices
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Helsinki University of Technology |
Licentiate thesis
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Instructions for the author
Authors
Date
1987
Department
Major/Subject
Elektronifysiikka
Mcode
1.69
Degree programme
Language
en
Pages
82
Series
Description
Supervisor
Sinkkonen, JuhaThesis advisor
Pohjonen, HelenaKeywords
analysis, DMOS, finite element, Helmholtz, high-voltage, Laplace, Poisson, potential, semiconductor, simulation