Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Applied Physics Letters, Volume 97, issue 19, pp. 1-3
Abstract
The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperature growth regime was investigated. The homoepitaxial (0001) GaN films grown at ∼780–790 °C showed smoothest morphologies near the cross-over between N-rich and Ga-rich growth (0.75<Ga/N<1.1) contrasting previous observations for low-temperature growth. The higher-quality growth near Ga/N∼1 resulted from lower thermal decomposition rates and was corroborated by slightly lower Ga vacancy concentrations [VGa], lower unintentional oxygen incorporation, and improved electron mobilities. The consistently low [VGa], i.e., ∼1016 cm−3 for all films attribute further to the significant benefits of the high-temperature growth regime.Description
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Koblmüller, G, Reurings, F, Tuomisto, F & Speck, J S 2010, 'Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature', Applied Physics Letters, vol. 97, no. 19, 191915, pp. 1-3. https://doi.org/10.1063/1.3514236