Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature
Loading...
Access rights
openAccess
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Date
2010
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
3
1-3
1-3
Series
Applied Physics Letters, Volume 97, issue 19
Abstract
The effect of Ga/N flux ratio on surface morphology, incorporation of point defects and electrical transport properties of GaN films grown by plasma-assisted molecular beam epitaxy in a recently developed high-temperature growth regime was investigated. The homoepitaxial (0001) GaN films grown at ∼780–790 °C showed smoothest morphologies near the cross-over between N-rich and Ga-rich growth (0.75<Ga/N<1.1) contrasting previous observations for low-temperature growth. The higher-quality growth near Ga/N∼1 resulted from lower thermal decomposition rates and was corroborated by slightly lower Ga vacancy concentrations [VGa], lower unintentional oxygen incorporation, and improved electron mobilities. The consistently low [VGa], i.e., ∼1016 cm−3 for all films attribute further to the significant benefits of the high-temperature growth regime.Description
Keywords
GaN, MBE, positron, vacancy
Other note
Citation
Koblmüller , G , Reurings , F , Tuomisto , F & Speck , J S 2010 , ' Influence of Ga/N ratio on morphology, Ga vacancies and electrical transport in (0001) GaN grown by plasma-assisted molecular beam epitaxy at high temperature ' , Applied Physics Letters , vol. 97 , no. 19 , 191915 , pp. 1-3 . https://doi.org/10.1063/1.3514236