Defect identification in semiconductors with positron annihilation: Experiment and theory

Simple item page
dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTuomisto, Filip
dc.contributor.authorMakkonen, Ilja
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-02T09:03:12Z
dc.date.available2015-09-02T09:03:12Z
dc.date.issued2013
dc.description.abstractPositron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.en
dc.description.versionPeer revieweden
dc.format.extent1583-1631
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTuomisto, Filip & Makkonen, Ilja. 2013. Defect identification in semiconductors with positron annihilation: Experiment and theory. Reviews of Modern Physics. Volume 85, Issue 4. 1583-1631. ISSN 0034-6861 (printed). DOI: 10.1103/revmodphys.85.1583.en
dc.identifier.doi10.1103/revmodphys.85.1583
dc.identifier.issn0034-6861 (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17576
dc.identifier.urnURN:NBN:fi:aalto-201509024194
dc.language.isoenen
dc.publisherAmerican Physical Society (APS)en
dc.relation.ispartofseriesReviews of Modern Physicsen
dc.relation.ispartofseriesVolume 85, Issue 4
dc.rights© 2013 American Physical Society (APS). This is the accepted version of the following article: Tuomisto, Filip & Makkonen, Ilja. 2013. Defect identification in semiconductors with positron annihilation: Experiment and theory. Reviews of Modern Physics. Volume 85, Issue 4. 1583-1631. ISSN 0034-6861 (printed). DOI: 10.1103/revmodphys.85.1583, which has been published in final form at http://journals.aps.org/rmp/abstract/10.1103/RevModPhys.85.1583.en
dc.rights.holderAmerican Physical Society (APS)
dc.subject.keywordpositron annihilation spectroscopyen
dc.subject.keywordsemiconductorsen
dc.subject.keywordpoint defectsen
dc.subject.otherPhysicsen
dc.titleDefect identification in semiconductors with positron annihilation: Experiment and theoryen
dc.typeA2 Katsausartikkeli tieteellisessä aikakauslehdessäfi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
A2_tuomisto_filip_2013.pdf
Size:
3.4 MB
Format:
Adobe Portable Document Format
Download

Collections

[article] Perustieteiden korkeakoulu / SCI