Defect identification in semiconductors with positron annihilation: Experiment and theory
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© 2013 American Physical Society (APS). This is the accepted version of the following article: Tuomisto, Filip & Makkonen, Ilja. 2013. Defect identification in semiconductors with positron annihilation: Experiment and theory. Reviews of Modern Physics. Volume 85, Issue 4. 1583-1631. ISSN 0034-6861 (printed). DOI: 10.1103/revmodphys.85.1583, which has been published in final form at http://journals.aps.org/rmp/abstract/10.1103/RevModPhys.85.1583.
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School of Science |
A2 Katsausartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Mcode
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Language
en
Pages
1583-1631
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Reviews of Modern Physics, Volume 85, Issue 4
Abstract
Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.Description
Keywords
positron annihilation spectroscopy, semiconductors, point defects
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Citation
Tuomisto, Filip & Makkonen, Ilja. 2013. Defect identification in semiconductors with positron annihilation: Experiment and theory. Reviews of Modern Physics. Volume 85, Issue 4. 1583-1631. ISSN 0034-6861 (printed). DOI: 10.1103/revmodphys.85.1583.