Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO
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© 2003 American Physical Society (APS). This is the accepted version of the following article: Tuomisto, Filip & Ranki, V. & Saarinen, K. & Look, D C. 2003. Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO. Physical Review Letters. Volume 91, Issue 20. 205502/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.91.205502, which has been published in final form at http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.91.205502.
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Date
2003
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Mcode
Degree programme
Language
en
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205502/1-4
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Physical Review Letters, Volume 91, Issue 20
Abstract
We have used positron annihilation spectroscopy to determine the nature and the concentrations of the open volume defects in as-grown and electron irradiated (Eel=2 MeV, fluence 6×10 exp 17 cm exp −2) ZnO samples. The Zn vacancies are identified at concentrations of [VZn]≃2×10 exp 15 cm exp −3 in the as-grown material and [VZn]≃2×10 exp 16 cm exp −3 in the irradiated ZnO. These concentrations are in very good agreement with the total acceptor density determined by temperature dependent Hall experiments. Thus, the Zn vacancies are dominant acceptors in both as-grown and irradiated ZnO.Description
Keywords
ZnO, vacancy, acceptor, irradiation
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Citation
Tuomisto, Filip & Ranki, V. & Saarinen, K. & Look, D C. 2003. Evidence of the Zn Vacancy Acting as the Dominant Acceptor in n-Type ZnO. Physical Review Letters. Volume 91, Issue 20. 205502/1-4. ISSN 0031-9007 (printed). DOI: 10.1103/physrevlett.91.205502