A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver
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A4 Artikkeli konferenssijulkaisussa
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en
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4
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2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Abstract
This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-μm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.Description
Publisher Copyright: © 2024 IEEE.
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Ryynanen, K, Stadius, K, Bergman, J, Kaval, G, Lasser, G, Vassilev, V, Fager, C & Ryynanen, J 2024, A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver. in 2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024. Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, IEEE, IEEE International Conference on Electronics, Circuits and Systems, Nancy, France, 18/11/2024. https://doi.org/10.1109/ICECS61496.2024.10848860