A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver

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A4 Artikkeli konferenssijulkaisussa

Date

2024

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Mcode

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Language

en

Pages

4

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2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024, Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

Abstract

This paper presents a wideband GaAs low-noise amplifier (LNA) that operates as a pre-amplifier for a CMOS receiver, with a background motivation of a chiplet-level integration. A GaAs pre-amplifier will improve the total gain and noise performance of the receiver. The paper presents a comprehensive analytical method for wideband matching - a design methodology for optimum matching networks. As a result, this LNA features a particularly wide bandwidth from 60 to 100 GHz with an average gain of 15 dB. The LNA was implemented with 0.1-μm GaAs pHEMT technology. The circuit occupies a die area of 1 mm-, noise figure is 7.2-8.5 dB at 60-100 GHz with a gain of 12-21 dB and DC power consumption of 20 mW.

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Publisher Copyright: © 2024 IEEE.

Keywords

Gallium arsenide (GaAs), low-noise amplifier (LNA), millimeter-wave (mm-wave), wideband

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Citation

Ryynanen, K, Stadius, K, Bergman, J, Kaval, G, Lasser, G, Vassilev, V, Fager, C & Ryynanen, J 2024, A Wideband 60-100 GHz GaAs Low-Noise Amplifier as a Pre-Amplifier to a CMOS Receiver . in 2024 31st IEEE International Conference on Electronics, Circuits and Systems, ICECS 2024 . Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, IEEE, IEEE International Conference on Electronics, Circuits and Systems, Nancy, France, 18/11/2024 . https://doi.org/10.1109/ICECS61496.2024.10848860