Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys
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© 2001 American Physical Society (APS). http://www.aps.org/
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School of Electrical Engineering |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2001
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en
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113308/1-3
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Physical Review B, Volume 64, Issue 11
Abstract
Si- and Be-doped Ga1-3xIn3xNxAs1-x (0 less than or equal tox less than or equal to 3%) layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 degreesC, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.Description
Keywords
GaInNAs films, alloys, nitrogen, photoluminescence
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Citation
Li, Wei & Pessa, Markus & Toivonen, Juha & Lipsanen, Harri. 2001. Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys. Physical Review B. Volume 64, Issue 11. P. 113308/1-3. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.64.113308.