Parity effect in Al and Nb single electron transistors in a tunable environment
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© 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://scitation.aip.org/content/aip/journal/apl/91/6/10.1063/1.2768897
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Authors
Savin, A. M.
Meschke, M.
Pekola, Jukka P.
Pashkin, Yu. A.
Li, T. F.
Im, H.
Tsai, J. S.
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
063512/1-3
Series
Applied Physics Letters, Volume 91, Issue 6
Abstract
Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in a tunable electromagnetic environment. The device with an Al island demonstrates gate charge modulation with 2e periodicity in a wide range of environmental impedances at bath temperatures below 340mK. Contrary to the results of the Al sample, the authors were not able to detect 2e periodicity under any conditions on similar samples with Nb island. The authors attribute this to the material properties of Nb.Description
Keywords
niobium, collective excitations, Josephson junctions, superconducting quantum interference devices, material properties
Other note
Citation
Savin, A. M. & Meschke, M. & Pekola, Jukka & Pashkin, Yu. A. & Li, T. F. & Im, H. & Tsai, J. S. 2007. Parity effect in Al and Nb single electron transistors in a tunable environment. Applied Physics Letters. Volume 91, Issue 6. P. 063512/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.2768897.