Tracking defect-induced ferromagnetism in GaN:Gd

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Journal Title
Journal ISSN
Volume Title
School of Science | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
081201/1-4
Series
Physical Review B, Volume 84, Issue 8
Abstract
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10 exp 19 cm exp −3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.
Description
Keywords
GaN, ferromagnetism, defects
Other note
Citation
Roever, Martin & Malindretos, Joerg & Bedoya-Pinto, Amilcar & Rizzi, Angela & Rauch, Christian & Tuomisto, Filip. 2011. Tracking defect-induced ferromagnetism in GaN:Gd. Physical Review B. Volume 84, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.081201