Tracking defect-induced ferromagnetism in GaN:Gd
Loading...
Access rights
© 2011 American Physical Society (APS). This is the accepted version of the following article: Roever, Martin & Malindretos, Joerg & Bedoya-Pinto, Amilcar & Rizzi, Angela & Rauch, Christian & Tuomisto, Filip. 2011. Tracking defect-induced ferromagnetism in GaN:Gd. Physical Review B. Volume 84, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.081201, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.84.081201.
URL
Journal Title
Journal ISSN
Volume Title
School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
2011
Major/Subject
Mcode
Degree programme
Language
en
Pages
081201/1-4
Series
Physical Review B, Volume 84, Issue 8
Abstract
We report on the magnetic properties of GaN:Gd layers grown by molecular beam epitaxy. A poor reproducibility with respect to the magnetic properties is found in these samples. Our results show strong indications that defects with a concentration of the order of 10 exp 19 cm exp −3 might play an important role for the magnetic properties. Positron annihilation spectroscopy does not support a direct connection between the ferromagnetism and the Ga vacancy in GaN:Gd. Oxygen codoping of GaN:Gd promotes ferromagnetism at room temperature and points to a role of oxygen for mediating ferromagnetic interactions in Gd-doped GaN.Description
Keywords
GaN, ferromagnetism, defects
Other note
Citation
Roever, Martin & Malindretos, Joerg & Bedoya-Pinto, Amilcar & Rizzi, Angela & Rauch, Christian & Tuomisto, Filip. 2011. Tracking defect-induced ferromagnetism in GaN:Gd. Physical Review B. Volume 84, Issue 8. 081201/1-4. ISSN 1098-0121 (printed). DOI: 10.1103/physrevb.84.081201