Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2007
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Language
en
Pages
3
1-3
1-3
Series
Applied Physics Letters, Volume 90, issue 15
Abstract
The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.Description
Keywords
AlGaN, optical properties, photoluminescence, positron annihilation, vacancies
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Citation
Slotte, J, Tuomisto, F, Saarinen, K, Moe, C G, Keller, S & DenBaars, S P 2007, ' Influence of silicon doping on vacancies and optical properties of Al(x)Ga(1-x)N thin films ', Applied Physics Letters, vol. 90, no. 15, 151908, pp. 1-3 . https://doi.org/10.1063/1.2721132