Vacancy defect distributions in bulk ZnO crystals

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorTuomisto, Filip
dc.contributor.authorLook, David C.
dc.contributor.departmentTeknillisen fysiikan laitosfi
dc.contributor.departmentDepartment of Applied Physicsen
dc.contributor.schoolPerustieteiden korkeakoulufi
dc.contributor.schoolSchool of Scienceen
dc.date.accessioned2015-09-04T10:12:55Z
dc.date.available2015-09-04T10:12:55Z
dc.date.issued2007
dc.description.abstractWe have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electron-irradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancydefects and their concentrations in these materials.en
dc.description.versionPeer revieweden
dc.format.extent647413/1-11
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTuomisto, Filip & Look, David C. 2007. Vacancy defect distributions in bulk ZnO crystals. Zinc Oxide Materials and Devices II. Proceedings of SPIE. 6474. 647413/1-11. ISSN 0277-786X (printed). ISBN 978-0-8194-6587-0 (printed). DOI: 10.1117/12.698902en
dc.identifier.doi10.1117/12.698902
dc.identifier.isbn978-0-8194-6587-0 (printed)
dc.identifier.issn0277-786X (printed)
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/17582
dc.identifier.urnURN:NBN:fi:aalto-201509024199
dc.language.isoenen
dc.publisherSPIE-Society of Photo Optical Instrumentation Engineersen
dc.relation.ispartofZinc Oxide Materials and Devices IIen
dc.relation.ispartofseriesProceedings of SPIEen
dc.relation.ispartofseries6474
dc.rights© 2007 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.rights.holderSociety of Photo Optical Instrumentation Engineers (SPIE)
dc.subject.keywordZnOen
dc.subject.keywordvacancyen
dc.subject.keywordpositron annihilationen
dc.subject.keywordsingle crystalen
dc.subject.otherPhysicsen
dc.titleVacancy defect distributions in bulk ZnO crystalsen
dc.typeA4 Artikkeli konferenssijulkaisussafi
dc.type.dcmitypetexten
dc.type.versionFinal published versionen
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