Vacancy defect distributions in bulk ZnO crystals

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Journal Title
Journal ISSN
Volume Title
School of Science | A4 Artikkeli konferenssijulkaisussa
Date
2007
Major/Subject
Mcode
Degree programme
Language
en
Pages
647413/1-11
Series
Proceedings of SPIE, 6474
Abstract
We have used positron annihilation spectroscopy to study vacancy defects in ZnO single crystals grown by various methods from both commercial and academic sources. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations provides the means to deduce both the identities and the concentrations of the vacancies. The annihilation characteristics of the Zn and O vacancies have been determined by studying electron-irradiated ZnO grown by the seeded vapor phase technique. The different ZnO samples were grown with the following techniques: the hydrothermal growth method, the seeded vapor phase technique, growth from melt (skull melting technique), and both conventional and contactless chemical vapor transport. We present a comparison of the vacancydefects and their concentrations in these materials.
Description
Keywords
ZnO, vacancy, positron annihilation, single crystal
Other note
Citation
Tuomisto, Filip & Look, David C. 2007. Vacancy defect distributions in bulk ZnO crystals. Zinc Oxide Materials and Devices II. Proceedings of SPIE. 6474. 647413/1-11. ISSN 0277-786X (printed). ISBN 978-0-8194-6587-0 (printed). DOI: 10.1117/12.698902