Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2010
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Language
en
Pages
3
1-3
1-3
Series
JOURNAL OF APPLIED PHYSICS, Volume 108, issue 4
Abstract
The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.Description
Keywords
positron, vacancy, ZnO
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Citation
Venkatachalapathy , V , Galeckas , A , Zubiaga , A , Tuomisto , F & Kuznetsov , A Y 2010 , ' Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions ' , Journal of Applied Physics , vol. 108 , no. 4 , 046101 , pp. 1-3 . https://doi.org/10.1063/1.3462394