Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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3
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Journal of Applied Physics, Volume 108, issue 4, pp. 1-3
Abstract
The nature of intrinsic defects in ZnO films grown by metal organic vapor phase epitaxy was studied by positron annihilation and photoluminescence spectroscopy techniques. The supply of Zn and O during the film synthesis was varied by applying different growth temperatures (325–485 °C), affecting decomposition of the metal organic precursors. The microscopic identification of vacancy complexes was derived from a systematic variation in the defect balance in accordance with Zn/O supply trends.Description
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Venkatachalapathy, V, Galeckas, A, Zubiaga, A, Tuomisto, F & Kuznetsov, A Y 2010, 'Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions', Journal of Applied Physics, vol. 108, no. 4, 046101, pp. 1-3. https://doi.org/10.1063/1.3462394