Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

The extensive research of aggressively scaled nano-electronic devices necessitates the inclusion of quantum confinement effects and their impact on performance. This work implements a set of multisubband phonon and impurity scattering mechanisms within the Kubo-Greenwood formalism in order to study their impact on the mobility in Si nanowire transistors (NWTs). This 1D treatment has been coupled with a 3D Poisson-2D Schrödinger solver, which accurately captures the effects of quantum confinement on charge dynamics. We also emphasize the importance of using the 1D models to evaluate the geometrical properties on mobility at the scaling limit.

Keywords

Impurity Scattering, Kubo-Greenwood Formalism, Matthiessen rule, Nanowire FETs, Phonon Scattering

DOI

10.1109/ULIS.2018.8354723

Citation

Medina-Bailon, C, Sadi, T, Nedjalkov, M, Lee, J, Berrada, S, Carrillo-Nunez, H, Georgiev, V, Selberherr, S & Asenov, A 2018, Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors . in 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 . vol. 2018-January, IEEE, pp. 1-4, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Granada, Spain, 19/03/2018 . https://doi.org/10.1109/ULIS.2018.8354723

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-201812106164

Collections

[article-cris] Perustieteiden korkeakoulu / SCI

Show all metadata

Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors

Access rights

URL

Journal Title

Journal ISSN

Volume Title

Authors

Date

Department

Major/Subject

Mcode

Degree programme

Language

Pages

Series

Abstract

Description

Keywords

Other note

DOI

Citation

Permanent link to this item

Collections