Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayers

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Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Date
2023-10
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Mcode
Degree programme
Language
en
Pages
Series
2D Materials
Abstract
Two-dimensional semiconducting transition metal dichalcogenides (TMDs) have attracted significant interest due to their unique optoelectronic properties. More often, these materials are enclosed inside a dielectric layer that can work as an insulator for field-effect transistors. The insulating layer is typically grown with atomic layer deposition (ALD). Here, we study the effects on bare and hBN-covered monolayer MoS 2 and WSe 2 flakes with ALD TiO 2 films. Our results reveal a significant shift and decrease in intensity in photoluminescence and Raman signals of the monolayer TMDs. Further analysis suggests that these changes are caused by chemical doping, strain, and dielectric screening after the ALD. Our study not only sheds light on the impact of ALD on the properties of TMDs, but also indicates ALD can be an alternative method to engineer the doping, strain and dielectric environment for potential optoelectronics and photonics applications.
Description
| openaire: EC/H2020/834742/EU//ATOP
Keywords
two-dimensional materials, atomic-layer deposition, van der Waals heterostructures
Other note
Citation
Turunen, M, Fernandez Pizarro, H, Akkanen, S-T, Seppänen, H & Sun, Z 2023, ' Effects of atomic layer deposition on the optical properties of two-dimensional transition metal dichalcogenide monolayers ', 2D Materials, vol. 10, no. 4, 045018 . https://doi.org/10.1088/2053-1583/acf1ad