Single-charge escape processes through a hybrid turnstile in a dissipative environment
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© 2011 IOP Publishing. This is the accepted version of the following article: Lotkhov, Sergey V. & Saira, Olli-Pentti & Pekola, Jukka & Zorin, Alexander B. 2011. Single-charge escape processes through a hybrid turnstile in a dissipative environment. New Journal of Physics. Volume 13, Issue 1. 013040/1-14. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/13/1/013040, which has been published in final form at http://iopscience.iop.org/1367-2630/13/1/013040. This work is distributed under the Creative Commons Attribution 3.0 License (https://creativecommons.org/licenses/by/3.0/).
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School of Science |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2011
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Mcode
Degree programme
Language
en
Pages
013040/1-14
Series
New Journal of Physics, Volume 13, Issue 1
Abstract
We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal electron turnstile embedded in a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, τ~2–20 s, in our two-junction circuit are comparable with those of typical multi-junction, N≥4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology applications.Description
Keywords
single-gate electron turnstile transistors, insulation properties, superconductor–insulator–normal metal tunnel junctions
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Citation
Lotkhov, Sergey V. & Saira, Olli-Pentti & Pekola, Jukka & Zorin, Alexander B. 2011. Single-charge escape processes through a hybrid turnstile in a dissipative environment. New Journal of Physics. Volume 13, Issue 1. 013040/1-14. ISSN 1367-2630 (printed). DOI: 10.1088/1367-2630/13/1/013040.
