Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorvon Gastrow, Guillaumeen_US
dc.contributor.authorCalle, Ericen_US
dc.contributor.authorOrtega, Pabloen_US
dc.contributor.authorAlcubilla, Ramonen_US
dc.contributor.authorDaniil, Andreanaen_US
dc.contributor.authorStutz, Elias Z.en_US
dc.contributor.authorFontcuberta i Morral, Annaen_US
dc.contributor.authorHusein, Sebastianen_US
dc.contributor.authorNietzold, Taraen_US
dc.contributor.authorBertoni, Marianaen_US
dc.contributor.authorSavin, Heleen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.groupauthorHele Savin Groupen
dc.contributor.organizationPolytechnic University of Cataloniaen_US
dc.contributor.organizationSwiss Federal Institute of Technology Lausanneen_US
dc.contributor.organizationArizona State Universityen_US
dc.date.accessioned2019-01-30T15:11:17Z
dc.date.available2019-01-30T15:11:17Z
dc.date.issued2018en_US
dc.description.abstractWe study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.en
dc.description.versionPeer revieweden
dc.format.extent4
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationvon Gastrow, G, Calle, E, Ortega, P, Alcubilla, R, Daniil, A, Stutz, E Z, Fontcuberta i Morral, A, Husein, S, Nietzold, T, Bertoni, M & Savin, H 2018, Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells . in 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) . IEEE, pp. 944-947, IEEE Photovoltaic Specialists Conference, Washington, District of Columbia, United States, 25/06/2017 . https://doi.org/10.1109/PVSC.2017.8366010en
dc.identifier.doi10.1109/PVSC.2017.8366010en_US
dc.identifier.isbn978-1-5090-5605-7
dc.identifier.otherPURE UUID: d691a7be-71cb-4d0f-bfd4-3b4efa89f73ben_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/d691a7be-71cb-4d0f-bfd4-3b4efa89f73ben_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/16856362/vonGastrow_et_al_bSi_metallization_IEEE_PVSC_2017.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/36306
dc.identifier.urnURN:NBN:fi:aalto-201901301476
dc.language.isoenen
dc.relation.ispartofIEEE Photovoltaic Specialists Conferenceen
dc.relation.ispartofseries2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)en
dc.rightsopenAccessen
dc.subject.keywordblack siliconen_US
dc.subject.keywordcontact resistanceen_US
dc.subject.keywordemitteren_US
dc.subject.keyworddopingen_US
dc.titleMetallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cellsen
dc.typeA4 Artikkeli konferenssijulkaisussafi
dc.type.versionacceptedVersion

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