Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells

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Date
2018
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Language
en
Pages
4
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2017 IEEE 44th Photovoltaic Specialists Conference (PVSC)
Abstract
We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron concentrations (4·10 19 cm -3 ) are obtained in bSi by ion implantation, while maintaining emitter saturation current (J 0e ) below 20 fA/cm 2 with Al 2 O 3 passivation. In diffused bSi emitters, doping increases to twice the values of planar substrates, reaching values up to 7·1020 cm -3 . Those doping values allow specific contact resistivities down to (0.3 ± 0.2) mΩ·cm 2 on boron-implanted bSi surfaces with nickel or aluminum contacts.
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Keywords
black silicon, contact resistance, emitter, doping
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Citation
von Gastrow , G , Calle , E , Ortega , P , Alcubilla , R , Daniil , A , Stutz , E Z , Fontcuberta i Morral , A , Husein , S , Nietzold , T , Bertoni , M & Savin , H 2018 , Metallized Boron-Doped Black Silicon Emitters For Front Contact Solar Cells . in 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC) . IEEE , pp. 944-947 , IEEE Photovoltaic Specialists Conference , Washington , District of Columbia , United States , 25/06/2017 . https://doi.org/10.1109/PVSC.2017.8366010