Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

The growth of high-quality semiconducting single-wall carbon nanotubes with a narrow band-gap distribution is crucial for the fabrication of high-performance electronic devices. However, the single-wall carbon nanotubes grown from traditional metal catalysts usually have diversified structures and properties. Here we design and prepare an acorn-like, partially carbon-coated cobalt nanoparticle catalyst with a uniform size and structure by the thermal reduction of a [Co(CN)6 ]3- precursor adsorbed on a self-assembled block copolymer nanodomain. The inner cobalt nanoparticle functions as active catalytic phase for carbon nanotube growth, whereas the outer carbon layer prevents the aggregation of cobalt nanoparticles and ensures a perpendicular growth mode. The grown single-wall carbon nanotubes have a very narrow diameter distribution centred at 1.7 nm and a high semiconducting content of > 95%. These semiconducting single-wall carbon nanotubes have a very small band-gap difference of ~ .08 eV and show excellent thin-film transistor performance.

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10.1038/ncomms11160

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Zhang, F, Hou, P X, Liu, C, Wang, B W, Jiang, H, Chen, M L, Sun, D M, Li, J C, Cong, H T, Kauppinen, E I & Cheng, H M 2016, ' Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution ', Nature Communications, vol. 7, 11160, pp. 1-8 . https://doi.org/10.1038/ncomms11160

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https://urn.fi/URN:NBN:fi:aalto-201609234421

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[article-cris] Perustieteiden korkeakoulu / SCI

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Growth of semiconducting single-wall carbon nanotubes with a narrow band-gap distribution

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