Defect evolution and interplay in n-type InN
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© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Applied Physics Letters, Volume 100, Issue 9 and may be found at http://scitation.aip.org/content/aip/journal/apl/100/9/10.1063/1.3688038.
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2012
Major/Subject
Mcode
Degree programme
Language
en
Pages
091907/1-3
Series
Applied Physics Letters, Volume 100, Issue 9
Abstract
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×10exp20 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaNbuffer layer and coincides with elevated dislocation densities in that area.Description
Keywords
InN, vacancies, positron annihilation, TEM, dislocations
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Citation
Rauch, Christian & Tuomisto, Filip & Vilalta-Clemente, Arantxa & Lacroix, Bertrand & Ruterana, Pierre & Kraeusel, Simon & Hourahine, Ben & Schaff, William J. 2012. Defect evolution and interplay in n-type InN. Applied Physics Letters. Volume 100, Issue 9. 091907/1-3. ISSN 0003-6951 (printed). DOI: 10.1063/1.3688038