Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited HfO2/ZnO and TiO2/ZnO Sandwiched Multilayer Thin Films

dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorClairvaux Felizco, Jenichien_US
dc.contributor.authorJuntunen, Tanelien_US
dc.contributor.authorUenuma, Mutsunorien_US
dc.contributor.authorEtula, Jarkkoen_US
dc.contributor.authorTossi, Camillaen_US
dc.contributor.authorIshikawa, Yasuakien_US
dc.contributor.authorTittonen, Ilkkaen_US
dc.contributor.authorUraoka, Yukiharuen_US
dc.contributor.departmentDepartment of Electronics and Nanoengineeringen
dc.contributor.departmentDepartment of Chemistry and Materials Scienceen
dc.contributor.groupauthorIlkka Tittonen Groupen
dc.contributor.groupauthorPhysical Characteristics of Surfaces and Interfacesen
dc.contributor.organizationNara Institute of Science and Technologyen_US
dc.date.accessioned2020-11-30T08:14:53Z
dc.date.available2020-11-30T08:14:53Z
dc.date.embargoinfo:eu-repo/date/embargoEnd/2021-09-25en_US
dc.date.issued2020-10-28en_US
dc.description.abstractHerein, enhancements in thermoelectric (TE) performance, both the power factor (PF) and thermal stability, are exhibited by sandwiching HfO2 and TiO2 layers onto atomic layer deposited-ZnO thin films. High-temperature TE measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO2/ZnO (TZO) samples, primarily owing to an increase in carrier concentration by Ti doping. On the other hand, HfO2/ZnO (HZO) achieved the highest PF values owing to maintaining Seebeck coefficients comparable to pure ZnO. HZO also exhibited excellent stability after multiple thermal cycles, which has not been previously observed for pure or doped ZnO thin films. Such improvement in both TE properties and thermal stability of HZO can be attributed to a shift in crystalline orientation from the a axis to c axis, as well as the high bond dissociation energy of Hf-O, stabilizing the ZnO structure. These unique properties exhibited by HZO and TZO thin films synthesized by atomic layer deposition pave the way for next-generation transparent TE devices.en
dc.description.versionPeer revieweden
dc.format.extent9
dc.format.extent49210-49218
dc.format.mimetypeapplication/pdfen_US
dc.identifier.citationClairvaux Felizco, J, Juntunen, T, Uenuma, M, Etula, J, Tossi, C, Ishikawa, Y, Tittonen, I & Uraoka, Y 2020, ' Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited HfO2/ZnO and TiO2/ZnO Sandwiched Multilayer Thin Films ', ACS Applied Materials and Interfaces, vol. 12, no. 43, pp. 49210-49218 . https://doi.org/10.1021/acsami.0c11439en
dc.identifier.doi10.1021/acsami.0c11439en_US
dc.identifier.issn1944-8244
dc.identifier.issn1944-8252
dc.identifier.otherPURE UUID: 61ecb8c4-5bd5-4fac-8a5d-8565d2dfc367en_US
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/61ecb8c4-5bd5-4fac-8a5d-8565d2dfc367en_US
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=85094932931&partnerID=8YFLogxKen_US
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/51694966/Felizco_Enhanced_thermoelectric_transport_ACS.pdfen_US
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/61714
dc.identifier.urnURN:NBN:fi:aalto-2020113020559
dc.language.isoenen
dc.publisherAMERICAN CHEMICAL SOCIETY
dc.relation.ispartofseriesACS Applied Materials and Interfacesen
dc.relation.ispartofseriesVolume 12, issue 43en
dc.rightsopenAccessen
dc.titleEnhanced Thermoelectric Transport and Stability in Atomic Layer Deposited HfO2/ZnO and TiO2/ZnO Sandwiched Multilayer Thin Filmsen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi

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