(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer
No Thumbnail Available
Access rights
restrictedAccess
URL
Journal Title
Journal ISSN
Volume Title
Abstract
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
Date
2022
Major/Subject
Mcode
Degree programme
Language
en
Pages
Series
Description
| openaire: EC/H2020/777222/EU//ATTRACT
Keywords
Other note
Citation
Liu, H, Pasanen, T, Fung, T H, Isometsä, J, Leiviskä, O, Vähänissi, V & Savin, H 2022, ' (oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer ', Conference on Gettering and Defect Engineering in Semiconductor Technology, Mondsee, Austria, 11/09/2022 - 17/09/2022 .