Room-temperature observation of impurity states in bulk GaAs by photoreflectance

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dc.contributorAalto-yliopistofi
dc.contributorAalto Universityen
dc.contributor.authorPikhtin, A. N.
dc.contributor.authorAiraksinen, V. M.
dc.contributor.authorLipsanen, H.
dc.contributor.authorTuomi, T.
dc.contributor.departmentDepartment of Applied Physicsen
dc.date.accessioned2017-10-15T20:38:15Z
dc.date.available2017-10-15T20:38:15Z
dc.date.issued1989
dc.description.abstractPhotoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.en
dc.description.versionPeer revieweden
dc.format.extent2
dc.format.mimetypeapplication/pdf
dc.identifier.citationPikhtin, A N, Airaksinen, V M, Lipsanen, H & Tuomi, T 1989, ' Room-temperature observation of impurity states in bulk GaAs by photoreflectance ', Journal of Applied Physics, vol. 65, no. 6, pp. 2556-2557 . https://doi.org/10.1063/1.342781en
dc.identifier.doi10.1063/1.342781
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.otherPURE UUID: 51457309-3dd6-430a-9350-073888e81260
dc.identifier.otherPURE ITEMURL: https://research.aalto.fi/en/publications/51457309-3dd6-430a-9350-073888e81260
dc.identifier.otherPURE LINK: http://www.scopus.com/inward/record.url?scp=0001220734&partnerID=8YFLogxK
dc.identifier.otherPURE FILEURL: https://research.aalto.fi/files/14809893/1.342781.pdf
dc.identifier.urihttps://aaltodoc.aalto.fi/handle/123456789/28185
dc.identifier.urnURN:NBN:fi:aalto-201710157045
dc.language.isoenen
dc.publisherAmerican Institute of Physics
dc.relation.ispartofseriesJournal of Applied Physicsen
dc.relation.ispartofseriesVolume 65, issue 6, pp. 2556-2557en
dc.rightsopenAccessen
dc.titleRoom-temperature observation of impurity states in bulk GaAs by photoreflectanceen
dc.typeA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessäfi
dc.type.versionpublishedVersion

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