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Room-temperature observation of impurity states in bulk GaAs by photoreflectance
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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2
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Journal of Applied Physics, Volume 65, issue 6, pp. 2556-2557
Abstract
Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.
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Pikhtin, A N, Airaksinen, V M, Lipsanen, H & Tuomi, T 1989, 'Room-temperature observation of impurity states in bulk GaAs by photoreflectance', Journal of Applied Physics, vol. 65, no. 6, pp. 2556-2557. https://doi.org/10.1063/1.342781