Room-temperature observation of impurity states in bulk GaAs by photoreflectance
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
1989
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Language
en
Pages
2
2556-2557
2556-2557
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Journal of Applied Physics, Volume 65, issue 6
Abstract
Photoreflectance (PR) experiments are performed on thick GaAs/GaAs epitaxial layers and on a nearly perfect GaAs single crystal. The first observations of PR spectra induced by impurities (shallow acceptors) in bulk semiconductors like gallium arsenide are reported.Description
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Pikhtin , A N , Airaksinen , V M , Lipsanen , H & Tuomi , T 1989 , ' Room-temperature observation of impurity states in bulk GaAs by photoreflectance ' , Journal of Applied Physics , vol. 65 , no. 6 , pp. 2556-2557 . https://doi.org/10.1063/1.342781