Point defects and p-type conductivity in Zn1-xMnxGeAs2
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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en
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7
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Journal of Applied Physics, Volume 116, issue 2, pp. 1-7
Abstract
Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.Description
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Kilanski, L, Rauch, C, Tuomisto, F, Podgórni, A, Dynowska, E, Dobrowolski, W, Fedorchenko, I V & Marenkin, S F 2014, 'Point defects and p-type conductivity in Zn 1-x Mn x GeAs 2', Journal of Applied Physics, vol. 116, no. 2, 023501, pp. 1-7. https://doi.org/10.1063/1.4887118