Point defects and p-type conductivity in Zn1-xMnxGeAs2
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A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2014
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Mcode
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Language
en
Pages
7
1-7
1-7
Series
JOURNAL OF APPLIED PHYSICS, Volume 116, issue 2
Abstract
Positron annihilation spectroscopy is used to study point defects in Zn1–xMnxGeAs2 crystals with low Mn content 0≤x≤0.042 with disordered zincblende and chalcopyrite structure. The role of negatively charged vacancies and non-open-volume defects is discussed with respect to the high p-type conductivity with carrier concentration 1019≤p≤1021cm−3 in our samples. Neutral As vacancies, together with negatively charged Zn vacancies and non-open-volume defects with concentrations around 1016−1018cm−3, are observed to increase with increasing Mn content in the alloy. The observed concentrations of defects are not sufficient to be responsible for the strong p-type conductivity of our crystals. Therefore, we suggest that other types of defects, such as extended defects, have a strong influence on the conductivity of Zn1–xMnxGeAs2 crystals.Description
Keywords
chalcogenide, positron, p-type, vacancy
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Citation
Kilanski , L , Rauch , C , Tuomisto , F , Podgórni , A , Dynowska , E , Dobrowolski , W , Fedorchenko , I V & Marenkin , S F 2014 , ' Point defects and p-type conductivity in Zn 1-x Mn x GeAs 2 ' , Journal of Applied Physics , vol. 116 , no. 2 , 023501 , pp. 1-7 . https://doi.org/10.1063/1.4887118