Observation of defect complexes containing Ga vacancies in GaAsN

Thumbnail Image

Files

1.1533843.pdf (456.6 KB)

Access rights

openAccess
publishedVersion

URL

Journal Title

Journal ISSN

Volume Title

A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Other link related to publication (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.

Authors

Date

2003

Department

Department of Applied Physics
Department of Micro and Nanosciences

Major/Subject

Mcode

Degree programme

Language

en

Pages

3

Series

Applied Physics Letters, Volume 82, issue 1, pp. 40-42

Abstract

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm−3 with increasing N composition and decreases after annealing at 700 °C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.

Description

Keywords

compound semiconductor, dilute nitrides, metalorganic vapor phase epitaxy, positron spectroscopy, vacancy

Other note

DOI

10.1063/1.1533843

Citation

Toivonen, J, Hakkarainen, T, Sopanen, M, Lipsanen, H, Oila, J & Saarinen, K 2003, 'Observation of defect complexes containing Ga vacancies in GaAsN', Applied Physics Letters, vol. 82, no. 1, pp. 40-42. https://doi.org/10.1063/1.1533843

Permanent link to this item

https://urn.fi/URN:NBN:fi:aalto-202510087891

Collections

[article-cris] Perustieteiden korkeakoulu / SCI