aalto1 untyped-item.component.html
Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP
Loading...
Access rights
openAccess
publishedVersion
URL
Journal Title
Journal ISSN
Volume Title
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
This publication is imported from Aalto University research portal.
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
View publication in the Research portal (opens in new window)
View/Open full text file from the Research portal (opens in new window)
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Date
Department
Major/Subject
Mcode
Degree programme
Language
en
Pages
10
Series
Physical Review B, Volume 51, issue 7, pp. 4176-4185
Abstract
We show that the Doppler broadening of positron annihilation radiation can be used in the identification of vacancy defects in compound semiconductors. Annihilation of trapped positrons with surrounding core electrons reveals chemical information that becomes visible when the experimental backgorund is reduced by the coincidence technique. We also present a simple calculational scheme to predict the high-momentum part of the annihilation line. The utility of the method is demonstrated by providing results for vacancies in InP. In electron irradiated InP the isolated In and P vacancies are distinguished from each other by the magnitude of the core-electron annihilation. In heavily Zn-doped InP we detect a native vacancy defect and identify it to a P vacancy decorated by Zn atoms.
Description
Other note
Citation
Alatalo, M, Kauppinen, H, Saarinen, K, Puska, M J, Mäkinen, J, Hautojärvi, P & Nieminen, R M 1995, 'Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP', Physical Review B, vol. 51, no. 7, pp. 4176-4185. https://doi.org/10.1103/PhysRevB.51.4176