Valence-band offsets at the AlxGa0.5-xIn0.5P-ZnSe(001) lattice-matched interface
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© 1997 American Physical Society (APS). This is the accepted version of the following article: Bernardini, F. & Nieminen, Risto M. 1997. Valence-band offsets at the AlxGa0.5-xIn0.5P-ZnSe(001) lattice-matched interface. Physical Review B. Volume 55, Issue 3. 1718-1723. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.55.1718, which has been published in final form at http://journals.aps.org/prb/abstract/10.1103/PhysRevB.55.1718.
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Date
1997
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Language
en
Pages
1718-1723
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Physical Review B, Volume 55, Issue 3
Abstract
The difficulty in making good Ohmic contact at the interfaces with p-doped ZnSe is an important problem hindering the realization of blue-light-emitting diode lasers based on the II-VI semiconductor technology. So far no metal or semiconductor material has been found to have a low enough barrier at the (001) interface with ZnSe. A possible solution to this problem is the insertion of a so-called barrier-reduction layer at the interface with ZnSe. We have investigated the interface formation energies and valence-band offsets at the (001) interface between AlxGa0.5−xIn0.5P and ZnSe. The results of our calculations show the existence of a strong interdependence between the valence-band offset and the interface geometric structure. The interface is found to have structural and electronic similarities to the GaAs-ZnSe(001) system. The very low values obtained for the valence-band offset confirm the possibility of using this material as a major constituent of the barrier-reduction layer.Description
Keywords
p-doped ZnSe, Ohmic contact
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Citation
Bernardini, F. & Nieminen, Risto M. 1997. Valence-band offsets at the AlxGa0.5-xIn0.5P-ZnSe(001) lattice-matched interface. Physical Review B. Volume 55, Issue 3. 1718-1723. ISSN 1550-235X (electronic). DOI: 10.1103/physrevb.55.1718.