Atomic layer deposition of Al-doped ZnO thin films
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© 2013 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 31, Issue 1 and may be found at http://scitation.aip.org/content/avs/journal/jvsta/31/1/10.1116/1.4757764.
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School of Chemical Technology |
A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
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Date
2013
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Language
en
Pages
01A109/1-4
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 31, Issue 1
Abstract
Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2O3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2O3 phase and no further carrier doping of ZnO is observed.Description
Keywords
zinc oxide, thin films, doping, superconductors, aluminium
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Citation
Tynell, Tommi & Yamauchi, Hisao & Karppinen, Maarit & Okazaki, Ryuji & Terasaki, Ichiro. 2013. Atomic layer deposition of Al-doped ZnO thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 31, Issue 1. 01A109/1-4. ISSN 0734-2101 (printed). DOI: 10.1116/1.4757764.