Atomic layer deposition of Al-doped ZnO thin films
School of Chemical Technology | A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä
Unless otherwise stated, all rights belong to the author. You may download, display and print this publication for Your own personal use. Commercial use is prohibited.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 31, Issue 1
AbstractAtomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al 2O3 on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al 2O3 phase and no further carrier doping of ZnO is observed.
zinc oxide, thin films, doping, superconductors, aluminium
Tynell, Tommi & Yamauchi, Hisao & Karppinen, Maarit & Okazaki, Ryuji & Terasaki, Ichiro. 2013. Atomic layer deposition of Al-doped ZnO thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 31, Issue 1. 01A109/1-4. ISSN 0734-2101 (printed). DOI: 10.1116/1.4757764.